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GREMAN is a research laboratory on materials, microelectronics, acoustics and nanotechnology of the University of Tours, CNRS and INSA Centre Val de Loire created January 1st 2012 by the merging of several groups located in Tours and Blois, France. Its expertise covers the value chain from materials science up to devices (components, sensors, transducers ...) and their integration. Fields such as electrical energy efficiency, power microelectronics and the use of ultrasonic waves are particularly targeted, for applications in industry, health and nomadic apparatus.

The activities of GREMAN are focused on five priority topics :

  • Functional oxides for energy efficiency: combinatory synthesis and nanostructuration.
  • Magnetic and optical properties of ferroic and electronic correlation materials.
  • Novel materials and components for power and RF microelectronics.
  • Piezoelectric and capacitive micronanosystems for ultrasonic transducers and energy conversion.
  • Ultrasonic methods and instrumentation for characterisation of complex media.









Cost of electricity consumption High pressure Piezoelectric materials Dielectric properties CMUT Disperse systems Composite Nanoparticles Acoustics Characterization Thin film growth Attractiveness of education Transducers Composites Acoustic waves Energy harvesting Thermal conductivity Piezoelectricity Hyperbolic law Colossal permittivity Epitaxy Organic solar cell Imaging Nanogenerator ZnO nanowires Individual housing X-ray diffraction Chemical synthesis Piézoélectricité Adsorption Electrodes ZnO Elasticity Thin film deposition Thermoelectrics Light diffraction Mesoporous silicon Time-dependent density functional theory Crystallography CCTO Modeling Zinc oxide Critical current density Electronic structure Mechanical properties Reliability Collaborative framework Porous materials Multiferroics Capacitors Resistive switching Electrochemical etching Annealing Raman spectroscopy Demand side management Ferroelectricity Smart grid Domain walls Oxides Nanowires Porous silicon Ceramics Capacitance Layered compounds Barium titanate Crosstalk Electron microscopy LPCVD Active filters Chemical vapor deposition Ferroelectrics Phase transitions Boundary value problems Microwave frequency Condensed matter properties AC switch Electrical resistivity Raman scattering Atomic force microscopy Silicon devices Atomistic molecular dynamics Piezoelectric Micromachining Diffraction optics Thin films Aluminium Doping Spark plasma sintering Carbides Electrical properties Piezoelectric properties Crystal structure Numerical modeling Precipitation Etching Crystal growth Materials 3C–SiC Silicon Ultrasound