GREMAN is a research laboratory on materials, microelectronics, acoustics and nanotechnology of the University of Tours, CNRS and INSA Centre Val de Loire created January 1st 2012 by the merging of several groups located in Tours and Blois, France. Its expertise covers the value chain from materials science up to devices (components, sensors, transducers ...) and their integration. Fields such as electrical energy efficiency, power microelectronics and the use of ultrasonic waves are particularly targeted, for applications in industry, health and nomadic apparatus.

The activities of GREMAN are focused on five priority topics :

  • Functional oxides for energy efficiency: combinatory synthesis and nanostructuration.
  • Magnetic and optical properties of ferroic and electronic correlation materials.
  • Novel materials and components for power and RF microelectronics.
  • Piezoelectric and capacitive micronanosystems for ultrasonic transducers and energy conversion.
  • Ultrasonic methods and instrumentation for characterisation of complex media.









Spark plasma sintering 3C–SiC Ferroelectricity Collaborative framework Composites Modeling Atomistic molecular dynamics Porous materials Piezoelectricity Organic solar cell Diffraction optics Dielectric properties Nanoparticles Precipitation Active filters Thin film deposition Etching Crystal structure Oxides Micromachining X-ray diffraction Smart grid Silicon Time-dependent density functional theory Microwave frequency Doping Electrodes Raman scattering Cryoetching Crystal growth Thermal conductivity FEXT Composite Attractiveness of education Imaging Magnetization dynamics Demand side management Light diffraction Barium titanate Transducers Energy harvesting Epitaxy Electrolyte Electronic structure High pressure Piezoelectric materials Crosstalk Domain walls Carbides Annealing Numerical modeling ZnO Materials Capacitance LPCVD Atomic force microscopy CCTO Characterization Colossal permittivity Crystallography Thermoelectrics Nanowires Electric discharges Resistive switching Reliability AC switch Boundary value problems ZnO nanowires Porous silicon Thin films CMUT Ferroelastic Elasticity Electrical properties Density functional theory Phase transitions Electrical resistivity Acoustic waves Silicon devices Acoustics Condensed matter properties Ferroelectric phase transitions DNA Electrochemical etching Hyperbolic law Thin film growth Capacitors Adsorption Electron microscopy Ceramics Aluminium Ferroelectrics Mesoporous silicon Chemical synthesis Ferromagnetic resonance Fluorocarbon Disperse systems Chemical vapor deposition Fabrication method Layered compounds