Skip to Main content Skip to Navigation
Journal articles

High-pressure, high temperature insertion of bismuth in the siliceous zeolite silicalite-1

Abstract : A silicalite-1/bismuth composite was synthesized by insertion of liquid bismuth in the 5.5 Å diameter pores of the zeolite under high-pressure, high-temperature conditions. The insertion of bismuth stabilizes the structure with respect to pressure-induced amorphization. Transmission electron microscopy indicated the presence of chains of atoms, which correspond to the 5.5 Å diameter of the host silicalite-1 structure. Neutron powder diffraction also confirmed the insertion of Bi in the pores of silicalite-1. Density functional theory calculations indicate that the insertion of bismuth results in formation of chains with short and long Bi-Bi distances in the pores of the host silicalite-1 linked to the framework by van der Waal's interactions. The material is predicted to be a semiconductor with a band gap of 0.4 eV.
Document type :
Journal articles
Complete list of metadatas

https://hal.archives-ouvertes.fr/hal-02305569
Contributor : Bruno Alonso <>
Submitted on : Monday, December 21, 2020 - 2:19:30 PM
Last modification on : Tuesday, February 9, 2021 - 11:24:48 AM

File

Zhao_Bi_MFI_Solid_State_Scienc...
Files produced by the author(s)

Identifiers

Collections

Citation

Yixuan Zhao, Sébastien Clément, Vasyl Veremeienko, Pierre Toulemonde, Thomas Hansen, et al.. High-pressure, high temperature insertion of bismuth in the siliceous zeolite silicalite-1. Solid State Sciences, Elsevier, 2019, 97, pp.106001. ⟨10.1016/j.solidstatesciences.2019.106001⟩. ⟨hal-02305569⟩

Share

Metrics

Record views

414

Files downloads

41