Predictive gate ageing-laws of SiC MOSFET under repetitive short-circuit stress

Frédéric Richardeau (1) , Yazan Barazi (2, 3)

1 LAPLACE-CS - Convertisseurs Statiques
2 IRT Saint Exupéry - Institut de Recherche Technologique
3 LAPLACE - LAboratoire PLasma et Conversion d'Energie

This paper proposes SiC MOSFET gate ageing-laws under repetitive short-circuit stress. Based on analytical studies, physical forms and preconditioning data, numerical fitting based on stress variables T j, T Pulse Gate Damage % and E sc is proposed. Accuracy and prediction capabilities of ageing-laws have been evaluated and compared. Resulting in suggesting a new ageing-law based on T Al_Top metal-source. This one gives the best fitting accuracy. Finally, the ageing-law based directly on the short-circuit energy E sc appears to have the best in prediction capability.

Mots clés: SiC Mosfet; Short-Circuit; Failure-Mode; Gate-Ageing; Gate-Ageing Modelling; Wide Band Gap Power Device Reliability; Wide Band Gap Power Device Robustness

Domaines: Energie électrique; Electronique

Frédéric Richardeau, Yazan Barazi. Predictive gate ageing-laws of SiC MOSFET under repetitive short-circuit stress. 33rd European Symposium on Reliability of Electron Devices Failure Physics and Analysis, Sep 2022, Berlin, Germany. ⟨hal-03789820⟩