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Predictive gate ageing-laws of SiC MOSFET under repetitive short-circuit stress

Abstract : This paper proposes SiC MOSFET gate ageing-laws under repetitive short-circuit stress. Based on analytical studies, physical forms and preconditioning data, numerical fitting based on stress variables Tj, TPulse Gate Damage % and Esc is proposed. Accuracy and prediction capabilities of ageing-laws have been evaluated and compared. Resulting in suggesting a new ageing-law based on TAl_Top metal-source. This one gives the best fitting accuracy. Finally, the ageing-law based directly on the short-circuit energy Esc appears to have the best in prediction capability.
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https://hal.archives-ouvertes.fr/hal-03791964
Contributor : Frédéric Richardeau Connect in order to contact the contributor
Submitted on : Thursday, September 29, 2022 - 4:33:13 PM
Last modification on : Saturday, October 1, 2022 - 3:55:34 AM

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Frédéric Richardeau, Yazan Barazi. Predictive gate ageing-laws of SiC MOSFET under repetitive short-circuit stress. Microelectronics Reliability, 2022, pp.114706. ⟨10.1016/j.microrel.2022.114706⟩. ⟨hal-03791964⟩

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