Origin of Pr 3+ luminescence in hafnium silicate films: combined atom probe tomography and TEM investigations

Abstract : Origin of Pr 3+ luminescence in hafnium silicate films: combined atom probe tomography and TEM investigations To cite this article: Rémi Demoulin et al 2018 Nano Futures 2 035005 View the article online for updates and enhancements. Related content Thermal stability of high-k Si-rich HfO2 layers grown by RF magnetron sputtering L Khomenkova, X Portier, J Cardin et al.-High-k Hf-based layers grown by RF magnetron sputtering L Khomenkova, C Dufour, P-E Coulon et al.-XRD and EXAFS studies on the structure of Er3+-doped SiO2–HfO2 glass-ceramic waveguides: Er3+-activated HfO2 Abstract Structural, chemical, and luminescence properties of Pr 3+-doped HfSiO x layers fabricated by radio-frequency magnetron sputtering were examined as a function of annealing temperature. Phase separation between SiO 2 and HfO 2 as well as the location of Pr 3+ dopants were investigated using atom probe tomography and transmission electron microscopy while optical properties of Pr 3+ ions were studied using photoluminescence measurements. As a result, (i) we evidenced the location of the Pr 3+ dopants in the HfO 2 phase while the SiO 2 phase was discovered to be free of these dopants, (ii) the HfO 2 phase was identified to crystallize in the cubic phase until 1050 °C annealing, (iii) no Pr clusters were detected as function of annealing, and (iv) luminescence properties were discussed in regard to the location of Pr in the HfO 2 cubic phase.
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Rémi Demoulin, Georges Beainy, Celia Castro, Philippe Pareige, Larysa Khomenkova, et al.. Origin of Pr 3+ luminescence in hafnium silicate films: combined atom probe tomography and TEM investigations. Nano Futures, 2018, 2 (3), pp.2. ⟨10.1088/2399-1984/aad009⟩. ⟨hal-01845624⟩

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