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Light emission and structure of Nd-doped Si-rich-HfO 2 films prepared by magnetron sputtering in different atmospheres

Abstract : Radio-frequency magnetron sputtering was used to produce HfO 2 films doped with Nd, Si and N. The deposition was carried out in two different atmospheres: i) in pure argon plasma to grow Si-HfO 2 :Nd films, and ii) in argon-nitrogen mixed plasma to produce SiN -HfO 2 :Nd films. The effect of annealing temperature on optical and structural properties of the films was investigated. Annealing was performed at T A = 800-1100 °C for t A = 15 min in nitrogen atmosphere. The evolution of film's properties was studied by means of the scanning electronic microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and photo-luminescence (PL) methods. It was observed that the film morphology depends significantly on the deposition atmosphere. For the Si-HfO 2 :Nd films, the presence of the grains with the mean size about 100 nm was detected by the SEM method. The tetragonal HfO 2 and SiO 2 phases have been detected by the XRD method after film annealing at 950 °C. PL spectra of these films are complex and demonstrate several PL bands in the visible (400-750 nm) and infrared (800-1430 nm) spectral ranges. Their contribution depends on the annealing temperature and governs the shape of total PL spectrum. In contrary, the SiN -HfO 2 :Nd films showed unstructured smooth surface as well as featureless PL spectra. Whatever the annealing temperature, they demonstrate broad unstructured PL band with the peak within 440-480 nm. Peculiarities of PL spectra of both types of the films and the mechanism of phase separation are analyzed and discussed.
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Submitted on : Wednesday, March 13, 2019 - 2:16:42 PM
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Leonardo Gabriel Vega Macotela, Vega Macotela, Tetyana Torchynska, Larysa Khomenkova, Fabrice Gourbilleau. Light emission and structure of Nd-doped Si-rich-HfO 2 films prepared by magnetron sputtering in different atmospheres. Materials Chemistry and Physics, Elsevier, 2019, 229, pp.263-268. ⟨10.1016/j.matchemphys.2019.03.007⟩. ⟨hal-02066472⟩



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